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AH212
Product Features
1800 - 2400 MHz 26 dB Gain +30 dBm P1dB +46 dBm Output IP3 +5V Single Positive Supply Internal Active Bias
The Communications Edge TM Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Product Description
The AH212 is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +30 dBm of compressed 1-dB power. The amplifier is available in an industry-standard SMT lead-free/green/RoHS-compliant SOIC-8 or 4x5mm DFN package. All devices are 100% RF and DC tested.
Functional Diagram
Vcc1 1 8 N/C Vbias1 2 7 Vcc2 / RF Out 6 Vcc2 / RF Out
RF In 3
Vbias2 4
5 N/C
AH212-S8G
Vbias1 1 12 Vcc1 N/C 2 11 N/C RF In 3 10 Vcc2 / RF Out N/C 4 N/C 5 Vbias2 6 9 Vcc2 / RF Out 8 N/C 7 N/C
Lead-free/green/RoHS-compliant The product is targeted for use as linear driver amplifier for SOIC-8 & 4x5mm DFN Package various current and next generation wireless technologies
Applications
Mobile Infrastructure WiBro Infrastructure TD-SCDMA
such as GPRS, GSM, CDMA, W-CDMA, TD-SCDMA, and WiBro, where high linearity and high power is required. The internal active bias allows the AH212 to maintain high linearity over temperature and operate directly off a +5 V supply.
AH212-EG
Specifications (1)
Parameters
Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure W-CDMA Channel Power
@ -45 dBc ACLR
Typical Performance (1)
Units Min
MHz MHz dB dB dB dBm dBm dB dBm mA mA mA V 340 1800 22.2 2140 25 25 9 +29.5 +46 6.0 +21 400 85 315 5 500
Typ
Max
2400
Parameters
Frequency Gain (3) Input Return Loss Output Return Loss Output P1dB (3) Output IP3 IS-95A Channel Power
@ -45 dBc ACPR
Units
MHz dB dB dB dBm dBm dBm dBm dB
Typical
1960 25.8 15 11 +30 +48.5 +23.5 +21 5.5 6.0 +5 V @ 400 mA 2140 25 25 9 +29.5 +46
+29 +43.5
W-CDMA Channel Power
@ -45 dBc ACLR
Operating Current Range , Icc Stage 1 Amp Current, Icc1 Stage 2 Amp Current, Icc2 Device Voltage, Vcc
Noise Figure Supply Bias
3. The performance is shown for the AH212-S8G (SOIC-8 package) at 25C. The AH212-EG in a 4x5 mm DFN package offers approximately 0.5dB more gain and 0.5 dB higher P1dB.
1. Test conditions unless otherwise noted: 25 C, +5V, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature
Ordering Information
Part No.
AH212-S8G AH212-EG AH212-S8PCB1960 AH212-S8PCB2140 AH212-EPCB1960 AH212-EPCB2140
Rating
-40 to +85 C -65 to +150 C +26 dBm +7 V 900 mA 5W +250 C
Description
1 Watt, High Gain InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 package)
1 Watt, High Gain InGaP HBT Amplifier
(lead-free/green/RoHS-compliant 12-pin 4x5mm DFN package)
1960 MHz Evaluation Board 2140 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 1 of 12 August 2006
AH212
Gain
35 30 25 Gain (dB) 20
The Communications Edge TM Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Typical Device Data (SOIC-8)
S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 C, calibrated to device leads)
S11
1.0
S22
2. 0
DB(|S(2,1)|) AH212
6 0.
0. 4
6 0.
Swp Max 3GHz
1.0
Swp Max 3GHz
2. 0
0.8
0 3. 3.
0.8
0 4.
10.0
10.0
15 10 5 0 0.5 1 1.5 Frequency (GHz) 2 2.5 3
-0 .6
10.0 5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
0
0
.4 -0
0 2. -
.4 -0
-0 .6
0 2.
-1.0
Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain will be higher. The impedance plots are shown from 50 - 3000 MHz, with markers placed at 0.5 - 3.0 GHz in 0.5 GHz increment. S-Parameters for AH212-S8G (VCC = +5 V, ICC = 400 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
-9.19 -4.58 -0.92 -2.81 -4.10 -10.08 -14.20 -7.51 -6.58 -6.67 -7.87 -11.42 -18.51 -8.70 -4.43 -2.78 -2.44
-130.35 -125.96 -169.81 160.59 134.99 97.76 -174.16 146.36 101.88 65.24 37.31 19.84 69.85 105.38 93.47 84.89 81.11
17.61 21.86 27.39 26.96 26.35 30.19 31.30 29.49 27.14 25.02 23.35 22.01 20.56 18.40 15.61 12.91 10.51
65.80 69.36 14.98 -55.64 -69.83 -108.08 -167.40 141.86 99.61 63.05 28.87 -5.81 -44.21 -84.80 -122.39 -156.41 167.98
-64.44 -58.42 -55.39 -50.75 -49.90 -46.20 -49.63 -44.88 -45.19 -46.75 -47.96 -44.88 -40.54 -38.49 -38.94 -39.25 -38.27
122.93 -135.96 49.47 78.75 59.30 44.46 25.99 48.15 29.86 33.97 24.08 70.88 52.01 31.21 23.84 -2.01 0.70
-2.71 -2.92 -3.04 -1.13 -0.86 -0.93 -1.05 -1.97 -2.76 -2.82 -2.53 -2.08 -1.45 -1.02 -0.89 -1.16 -1.34
-1.0
S(1,1) AH212
-0.8
Swp Min 0.01GHz
S(2,2) AH212
-0.8
-
Swp Min 0.01GHz
-145.39 -160.72 -166.12 -169.23 -179.36 172.84 164.98 159.52 156.95 154.08 150.05 143.86 134.91 123.57 113.66 106.71 101.38
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014" FR4, four layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitor - C7. The markers and vias are spaced in 0.050" increments.
Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 2 of 12 August 2006
-4 .0 -5 .0
-3 .
0
-4 .0 -5 .0
2 -0.
2 -0.
-10.0
0 .2
0 5.
0.
0
4
0 4.
0 5.
-10.0
-3 .
0
0.2
10.0
AH212
Frequency (MHz) Gain (dB) Input Return Loss (dB) Output Return Loss (dB) Output P1dB (dBm) Output IP3 (dBm)
(+15 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-S8 1850 MHz Reference Design
Typical RF Performance at 25 C
1800 26.4 10.5 15.5 +30.5 +47.5 5.8 1850 26.2 12 15 +30.5 +47.5 5.8 +5 V 400 mA 1900 26.2 12.5 13 +30 +48.5 5.9
PORT P=1 Z=50 Ohm CAP ID=C1 C=47 pF CAP ID=C2 C=47 pF CAP ID=C6 C=1000 pF
Vcc = +5 V
CAP ID=C11 C=4.7E6 pF SIZE 1210 CAP ID=C10 C=1000 pF CAP ID=C9 C=47 pF
CAP ID=C5 C=1000 pF
RES ID=R2 R=0 Ohm
IND ID=L1 L=18 nH
8
IND ID=L2 L=18 nH Size 0805
5
1 2 NET="AH212" 7 6 3 4
67 58
CAP ID=C8 C=47 pF
Noise Figure (dB) Device / Supply Voltage Quiescent Current
RES ID=R1 R=10 Ohm RES ID=R3 R=75 Ohm
TLINP ID=TL1 Z0=50 Ohm L=125 mil Eeff=4.6 Loss=0 F0=0 MHz
PORT P=2 Z=50 Ohm CAP ID=C7 C=2.7 pF
All passive components are of size 0603 unless otherwise noted. VBC = +5 V
CAP ID=C4 C=1000 pF
C7 is placed between silkscreen marker "2" and "3" on WJ's eval Board or @ 10 degrees at 1.85GHz away from pins 6 and 7.
S21 vs. Frequency
S11 vs. Frequency
28 27
S21 (dB)
0
+25C -40C +85C
-5
S11 (dB)
26 25 24
+25C -40C +85C
-10 -15 -20 -25 1800
23 1800
1820
1840
1860
1880
1900
1820
1840
1860
1880
1900
Frequency (MHz)
S22 vs. Frequency
Frequency (MHz)
OIP3 vs. Frequency 55 50 45 40
+25 C, +15 dBm/tone
0 -5 -10 -15 -20
+25C -40C +85C
OIP3 (dBm)
S22 (dB)
-25 1800
1820
1840
1860
1880
1900
35 1800
1820
Frequency (MHz)
1840 1860 Frequency (MHz)
1880
1900
Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 3 of 12 August 2006
AH212
Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3
(+15 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
1960 MHz Application Circuit (AH212-S8PCB1960)
Typical RF Performance at 25 C
1960 MHz 25.8 dB 15 dB 11 dB +30 dBm +48.5 dBm +23.5 dBm 5.5 dB +5 V 400 mA
PORT P=1 Z=50 Ohm CAP ID=C1 C=47 pF CAP ID=C2 C=47 pF CAP ID=C6 C=1000 pF
Vcc = +5 V
CAP ID=C11 C=4.7E6 pF SIZE 1210 CAP ID=C10 C=1000 pF CAP ID=C9 C=47 pF
CAP ID=C5 C=1000 pF
RES ID=R2 R=0 Ohm
IND ID=L1 L=18 nH
IND ID=L2 L=18 nH Size 0805
8 5
1 2 3 4
Channel Power
(@-45 dBc ACPR, IS-95, 9 channels fwd)
NET="AH212"
6 7
6 7 5 8
CAP ID=C8 C=47 pF
Noise Figure Device / Supply Voltage Quiescent Current
RES ID=R1 R=10 Ohm RES ID=R3 R=75 Ohm
TLINP ID=TL1 Z0=50 Ohm L=125 mil Eeff=4.6 Loss=0 F0=0 MHz
PORT P=2 Z=50 Ohm CAP ID=C 7 C=2.7 pF
All passive components are of size 0603 unless otherwise noted. VBC = +5 V
CAP ID=C4 C=1000 pF
C7 is placed between silkscreen marker "2" and "3" on WJ's eval Board or @ 14 degrees at 1.96GHz away from pins 6 and 7.
S21 vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
28 27 S21 (dB) S11 (dB) 26 25 24
+25C -40C +85C
0
+25C -40C +85C
0 -5 S22 (dB) -10 -15 -20
+25C -40C +85C
-5 -10 -15 -20 -25 1930
23 1930
1940
1950
1960
1970
1980
1990
1940
1950 1960 1970 1980 1990 Frequency (MHz)
OIP3 vs. Temperature
-25 1930
1940
1950 1960 1970 1980 1990 Frequency (MHz)
OIP3 vs. Output Power
Frequency (MHz)
OIP3 vs. Frequency 55 50 45 40 35 1930
+25 C, +15 dBm/tone
55 50 45 40 35 -40
freq. = 1960 MHz, 1961 MHz, +15 dBm/tone
55 50 45 40 35
freq. = 1960 MHz, 1961 MHz, +25 C
OIP3 (dBm)
OIP3 (dBm)
1940
1950 1960 1970 Frequency (MHz)
1980
1990
-15
10 35 Temperature (C)
60
85
OIP3 (dBm)
12
13
14 15 16 Output Power (dBm) ACPR vs. Channel Power
17
18
P Bvs. F u cy 1d req en
31 30 P1dB (dBm) 29 28 27 26 1930
C ircuit bo areo izedat 1960M z ards ptim H
Noise Figure vs. Frequency
7 6
-40 -45 ACPR (dBc) -50 -55 -60 -65 -70
1940 1950 1960 1970 1980 1990
IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW 1960 MHz ,
NF (dB)
5 4 3
-40C
1940 1950
+25C
1960 1970
+85C
1980 1990
-40C
2 1930
+25C
+85C
-40 C
+25 C
+85 C
18
19
20
21
22
23
24
25
Freq cy(M z) uen H
Frequency (MHz)
Output Channel Power (dBm)
Specifications and information are subject to change without notice.
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 4 of 12 August 2006
AH212
Frequency (MHz) Gain (dB) Input Return Loss (dB) Output Return Loss (dB) Output P1dB (dBm) Output IP3 (dBm)
(+15 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-S8 2015 MHz Reference Design for TD-SCDMA Applications
Typical RF Performance at 25 C
2010 25.5 17 10.5 +30 +48 +23.5 6 +5 V 400 mA 2025 25.2 19 10 +30 +47.5 +23.5 6
RES ID=R1 R=10 Ohm RES ID=R3 R=75 Ohm PORT P=1 Z=50 Ohm CAP ID=C1 C=47 pF CAP ID=C2 C=47 pF CAP ID=C5 C=1000 pF CAP ID=C6 C=1000 pF
Vcc = +5 V
CAP ID=C11 C=4.7E6 pF SIZE 1210 CAP ID=C10 C=1000 pF CAP ID=C9 C=47 pF
RES ID=R2 R=0 Ohm
IND ID=L1 L=18 nH
IND ID=L2 L=18 nH Size 0805
8 5
1 2 NET="AH212" 3 4
7 6 6 7 5 8
CAP ID=C8 C=47 pF
Channel Power (dBm)
(@-45 dBc ACPR, IS-95, 9 channels fwd)
Noise Figure (dB) Device / Supply Voltage Quiescent Current
S21 vs. Frequency
TLINP ID=TL1 Z0=50 Ohm L=125 mil Eeff=4.6 Loss=0 F0=0 MHz
PORT P=2 Z=50 Ohm CAP ID=C7 C=2.7 pF
All passive components are of size 0603 unless otherwise noted. VBC = +5 V
CAP ID=C4 C=1000 pF
C7 is placed between silkscreen marker "2" and "3" on WJ's eval Board or @ 17 degrees at 2.01GHz away from pins 6 and 7.
S11 vs. Frequency
S22 vs. Frequency
28 27
S21 (dB) S11 (dB)
0
+25C -40C +85C
0 -5
S22 (dB)
-5 -10 -15 -20
+25C -40C +85C
26 25 24 23 2000
-10 -15 -20
+25C -40C +85C
2005
2010
2015
2020
2025
-25 2000
2005
2010
2015
2020
2025
-25 2000
2005
2010
2015
2020
2025
Frequency (MHz)
OIP3 vs. Frequency 55 50 45 40 35 2010
+25 C, +15 dBm/tone
Frequency (MHz)
ACPR vs. Channel Power
Frequency (MHz)
IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 2010 MHz
-35
OIP3 (dBm)
ACPR (dBc)
-45 -55 -65 -75
2015 2020 Frequency (MHz)
2025
19
20
21
22
23
24
Output Channel Power (dBm)
Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 5 of 12 August 2006
AH212
Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3
(+15 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
2140 MHz Application Circuit (AH212-S8PCB2140)
Typical RF Performance at 25 C
2140 MHz 25 dB 25 dB 9 dB +29.5 dBm +46 dBm +21 dBm 6 dB +5 V 400 mA
PORT P=1 Z=50 Ohm CAP ID=C1 C=47 pF C AP ID =C 2 C =47 pF CAP ID=C6 C=1000 pF
Vcc = +5 V
CAP ID=C11 C=4.7E6 pF SIZ E 1210
CAP ID=C5 C=1000 pF
CAP ID =C 10 C=1000 pF CAP ID=C9 C=47 pF
RES ID=R2 R=0 Ohm
IN D ID =L1 L=18 nH
IND ID=L2 L=18 nH Size 0805
5 8 6 7
6 7 5 8
1 2 NET="AH 212" 3 4
Channel Power
(@-45 dBc ACLR, W-CDMA, Test model 1 +64 DPCH, 5MHz offset)
CAP ID =C8 C=47 pF
Noise Figure Device / Supply Voltage Quiescent Current
RES ID=R1 R=10 Ohm RES ID=R3 R=75 Ohm
TLINP ID=TL1 Z0=50 Ohm L=110 mil Eeff=4.6 Loss=0 F0=0 MH z
PORT P=2 Z=50 Ohm C AP ID=C 7 C =2.4 pF
All passive components are of size 0603 unless otherwise noted. VBC = +5 V
CAP ID=C4 C=1000 pF
C7 is placed at silkscreen marker "2" on WJ's eval board or @ 12.2 deg at 2.14GHZ away from pins 6 and 7.
S21 vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
27 26 S21 (dB) S11 (dB) 25 24 23
+25C -40C +85C
0 -5 -10 S22 (dB) -15 -20 -25 -30 2160 2170 -35 2110 2120 2130 2140 2150 2160 2170 Frequency (MHz)
OIP3 vs. Temperature 55 50 45 40 35 -40
freq. = 2140 MHz, 2141 MHz, +15 dBm/tone
0
+25C -40C +85C
-5 -10 -15 -20
+25C -40C +85C
22 2110
2120
2130
2140
2150
-25 2110
2120
2130 2140 2150 2160 2170 Frequency (MHz)
O 3vs. O tpu P w IP u t o er
freq. =2140M z, 2141M z, +25 C H H
Frequency (MHz)
OIP3 vs. Frequency 55 50 45 40 35 2110
+25 C, +15 dBm/tone
55 50 45 40 35 12
OIP3 (dBm)
OIP3 (dBm)
OIP3 (dBm)
2120
2130 2140 2150 Frequency (MHz) P1dB vs. Frequency
2160
2170
-15
10 35 Temperature (C)
60
85
13
14 15 16 O tpu P w (dB ) u t o er m
ACLR vs. Channel Power
17
18
Noise Figure vs. Frequency
8 7 6 5 4 ACLR (dBc) NF (dB) -40 -45 -50 -55
30 29 P1dB (dBm) 28 27 26 25 2110
Circuit boards are optimized at 2140 MHz
3GPP W -CDMA, Test Model 1+64 DPCH, 5 MHz offset, 2140 MHz
-40C
2120 2130
+25C
2140 2150
+85C
2160 2170
-40C
3 2110 2120 2130
+25C
2140 2150
+85C
-60 2160 2170 18 19
-40 C
20
+25 C
21
+85 C
22
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm)
Specifications and information are subject to change without notice.
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 6 of 12 August 2006
AH212
Frequency (MHz) Gain (dB) Input Return Loss (dB) Output Return Loss (dB) Output P1dB (dBm) Output IP3 (dBm)
(+15 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-S8 2350 MHz Reference Design for WiBro Applications
Typical RF Performance at 25 C
2300 24.5 10 7.5 +30.4 +45 2350 24.4 10 7 +30 +44.3 +5 V 400 mA 2400 24.3 10 6.5 +29.6 +43.7
PORT P=1 Z=50 Ohm
Vcc = +5 V All passive components are of size 0603 unless otherwise noted.
CAP ID=C11 C=4.7E6 pF SIZE 1210 CAP ID=C10 C=1000 pF CAP ID=C9 C=22 pF
CAP ID=C5 C=1000 pF
CAP ID=C6 C=1000 pF
RES ID=R2 R=0 Ohm CAP ID=C1 C=22 pF CAP ID=C2 C=6.8 pF
IND ID=L1 L=12 nH
8 5
1 2 NET="AH212" 3 4
7 6 6 7 5 8
IND ID=L2 L=15 nH Size 0805 CAP ID=C8 C=22 pF
Device / Supply Voltage Quiescent Current
PORT P=2 Z=50 Ohm CAP ID=C7 C=2.2 pF
RES ID=R1 R=20 Ohm
CAP ID=C12 C=1.5 pF
RES ID=R3 R=75 Ohm
C12 is placed at silkscreen marker "A" on WJ's eval Board or @ 4.2 degrees at 2.35 GHz away from pin 3.
C7 is placed at silkscreen marker "1" on WJ's eval Board or @ 4.2 degrees at 2.35 GHz away from pin 6 and 7.
VBC = +5 V
CAP ID=C4 C=1000 pF
S21 vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
26 25
S21 (dB) S11 (dB)
0 -5 -10 -15 -20 -25 2300
S22 (dB)
0 -5 -10 -15 -20 -25 2300
24 23 22 21 2300
2320
2340
2360
2380
2400
2320
2340
2360
2380
2400
2320
2340
2360
2380
2400
Frequency (MHz)
OIP3 vs. Frequency 55 50 45 40 35 2300
+25 C, +15 dBm/tone
Frequency (MHz)
P1dB vs. Frequency
31 30
P1dB (dBm)
Frequency (MHz)
OIP3 (dBm)
29 28 27 26 2300
2320
2340 2360 Frequency (MHz)
2380
2400
2320
2340
2360
2380
2400
Frequency (MHz)
Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 7 of 12 August 2006
AH212
Gain
35
The Communications Edge TM Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Typical Device Data (DFN 4x5 mm)
S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 C, calibrated to device leads)
S11
1.0
6 0.
S22
2. 0
0 3. 3.
0 4.
Gain (dB)
10.0
10.0
15 10 5 0 0.5 1 1.5 Frequency (GHz) 2 2.5 3
-0 .6
10.0 5.0
20
0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
0
.4 -0
0 2. -
.4 -0
-0 .6
0 2.
S(1,1) AH212
-0.8
Swp Min 0.01GHz
-1.0
Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain will be higher. The impedance plots are shown from 50 - 3000 MHz, with markers placed at 0.5 - 3.0 GHz in 0.5 GHz increment. S-Parameters for AH212-EG (VCC = +5 V, ICC = 400 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
-10.92 -3.48 -0.12 -2.58 -3.56 -8.55 -12.30 -5.21 -4.42 -5.81 -9.68 -22.03 -13.88 -7.86 -5.27 -4.10 -3.60
-112.71 -121.92 -168.99 163.93 147.73 125.39 -155.14 -171.47 164.06 140.51 118.60 121.72 -133.74 -148.71 -164.02 -176.86 174.71
14.75 22.90 27.45 26.41 25.52 28.69 29.61 28.43 26.63 25.16 23.77 22.15 20.27 18.12 16.09 14.35 12.79
95.57 70.25 14.93 -53.73 -62.82 -95.79 -147.37 167.21 132.05 99.97 67.69 34.69 2.51 -28.03 -56.46 -85.23 -117.50
-73.98 -70.46 -67.96 -60.92 -59.17 -54.90 -55.92 -55.39 -56.48 -57.72 -60.00 -60.00 -55.39 -50.75 -48.64 -47.96 -47.13
47.38 9.54 94.09 47.82 67.34 49.69 32.50 23.93 3.83 -6.10 -86.34 -166.62 157.88 130.86 115.31 96.72 90.37
-2.62 -2.87 -2.87 -1.39 -1.19 -1.51 -1.54 -1.50 -1.61 -1.61 -1.58 -1.43 -1.39 -1.27 -1.27 -1.27 -1.24
-1.0
S(2,2) AH212
-0.8
-
Swp Min 0.01GHz
-143.22 -160.44 -166.36 -168.43 -177.07 179.99 179.91 177.74 175.61 173.57 171.97 169.44 166.52 162.89 159.59 156.84 154.34
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014" FR4, four layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitor - C7. The markers and vias are spaced in 0.050" increments.
Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 8 of 12 August 2006
-4 .0 -5 .0
-3 .
0
-4 .0 -5 .0
2 -0.
2 -0.
-10.0
0.2
-10.0
-3 .
0
0.2
25
0 5.
0. 4
0. 4
30
DB(|S(2,1)|) AH212
6 0.
Swp Max 3GHz
1.0
Swp Max 3GHz
2. 0
0.8
0.8
0
0 4.
0 5.
10.0
AH212
Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3
(+15 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
1960 MHz Application Circuit (AH212-EPCB1960)
Typical RF Performance at 25 C
1960 MHz 27 dB 16 dB 10 dB +30.5 dBm +46.5 dBm +24.5 dBm 5.5 dB +5 V 400 mA
Channel Power
(@-45 dBc ACPR, IS-95, 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current
S21 vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
30
+25C -40C +85C
0
+25C -40C +85C
0 -5
S22 (dB)
29
S21 (dB)
-5
S11 (dB)
28 27 26 25 1930
-10 -15 -20 -25 1930
-10 -15 -20
+25C -40C +85C
1940
1950
1960
1970
1980
1990
1940
1950
1960
1970
1980
1990
-25 1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
Supply Bias vs. Temperature 450 430
OIP3 (dBm) OIP3 (dBm)
Frequency (MHz)
OIP3 vs. Output Power 55 50 45 40 35
freq. = 1960 MHz, 1961 MHz, +25 C
Frequency (MHz)
OIP3 vs. Temperature 55 50 45 40 35
freq. = 1960 MHz, 1961 MHz, +15 dBm/tone
410 390 370 350 -40 -15 10 35 Temperature (C) P1dB vs. Frequency 60 85
12
13
14 15 16 Output Power (dBm) Noise Figure vs. Frequency
17
18
OIP3 (dBm)
-40
-15
10 35 Temperature (C) ACPR vs. Channel Power
60
85
31 30
P1dB (dBm)
Circuit boards are optimized at 1960 MHz
7
-35
IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 1960 MHz
6
ACPR (dBc)
29 28 27 26 1930
-40C +25C +85C
NF (dB)
5 4 3
-40C +25C +85C
-45 -55 -65 -40 C -75 +25 C 23 24 +85 C 25 26
1940
1950
1960
1970
1980
1990
2 1900
1920
1940
1960
1980
2000
18
19
20
21
22
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm)
Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 9 of 12 August 2006
AH212
FreFrequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3
(+15 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
2140 MHz Application Circuit (AH212-EPCB2140)
Typical RF Performance at 25 C
2140 MHz 25.5 dB 24 dB 9 dB +30.5 dBm +46 dBm +22 dBm 6 dB +5 V 400 mA
Channel Power
(@-45 dBc ACPR, IS-95, 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current
S21 vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
28 27
S21 (dB) S11 (dB)
0
+25C -40C +85C
0 -5
S22 (dB)
-5 -10 -15 -20 -25
+25C -40C +85C
26 25 24 23 2110
-10 -15 -20
+25C -40C +85C
2120
2130
2140
2150
2160
2170
-30 2110
2120
2130
2140
2150
2160
2170
-25 2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
Supply Bias vs. Temperature 450 430
OIP3 (dBm) OIP3 (dBm)
Frequency (MHz)
OIP3 vs. Output Power 55 50 45 40 35
freq. = 2140 MHz, 2141 MHz, +25 C
Frequency (MHz)
OIP3 vs. Temperature 55 50 45 40 35
freq. = 2140 MHz, 2141 MHz, +15 dBm/tone
410 390 370 350 -40 -15 10 35 Temperature (C) P1dB vs. Frequency 60 85
12
13
14 15 16 Output Power (dBm) Noise Figure vs. Frequency
17
18
OIP3 (dBm)
-40
-15
10 35 Temperature (C) ACLR vs. Channel Power
60
85
31 30
P1dB (dBm)
Circuit boards are optimized at 2140 MHz
8 7 6 5 4
-40C +25C +85C
ACLR (dBc)
3GPP W-CDMA, Test Model 1+64 DPCH, 5 MHz offset, 2140 MHz
-40 -45 -50 -55 -40 C -60 +25 C 22 +85 C 23 24
29 28 27 26 2110
-40C +25C +85C
NF (dB)
2120
2130
2140
2150
2160
2170
3 2110
2120
2130
2140
2150
2160
2170
18
19
20
21
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm)
Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 10 of 12 August 2006
AH212
The Communications Edge TM Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-S8G (Lead-Free SOIC-8 Package) Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with an "AH212G" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
ESD / MSL Information
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard:
Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 2000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101
MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes Mounting Configuration / Land Pattern
1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters
Functional Pin Layout
Vcc1 1 8 N/C 7 Vcc2 / RF Out 6 Vcc2 / RF Out
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2)
Vbias1 2 RF In 3
Rating
-40 to +85C 33 C / W 156 C
Vbias2 4
5 N/C
Notes: 1. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. Tj is a function of the voltage and the current applied. It can be calculated by: Tj = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 400 mA at an 85 C case temperature.
Function
Vcc1 Input Output/ Vcc2 Vbias1 Vbias2 GND N/C or GND
Pin No.
1 3 6, 7 2 4 Backside Paddle 5, 8
Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 11 of 12 August 2006
AH212
The Communications Edge TM Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-EG (Lead-Free DFN 4x5 mm Package) Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is Matte Tin. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with an "AH212-EG" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
AH212-EG
ESD / MSL Information
ESD Rating: Value: Test: Standard:
Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 2000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101
Mounting Configuration / Land Pattern
ESD Rating: Value: Test: Standard:
MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2)
Rating
-40 to +85 C 33 C / W 156 C
Notes: 1. The thermal resistance is referenced from the junction-to-case at a case. temperature of 85 C. Tj is a function of the voltage and the current applied. It can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 400 mA at an 85 C case temperature.
Functional Pin Layout
Vbias1 1 12 Vcc1 N/C 2 11 N/C RF In 3 10 Vcc2 / RF Out N/C 4 N/C 5 Vbias2 6 9 Vcc2 / RF Out 8 N/C 7 N/C
Function
Vcc1 Input Output /Vcc2 Vbias1 Vbias2 GND N/C or GND
Pin No.
12 3 9, 10 1 6 Backside Paddle 2, 4, 5, 7, 8, 11
Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 12 of 12 August 2006

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